Lab Tutorial on Study of FET Characteristics

Krishanu Mitra
03 Mar 2017
Read Time : 10 Minutes
Lab Tutorial on Study of FET Characteristics

Transistor is a kind of current-controlled device and its generating current includes electron flow and hole flow. The transistor is therefore referred to as Bipolar Junction Transistor. FET is a unipolar device, in which the current of    n-channel FET is formed by electron flow and the current of p-channel is formed by hole flow. FET is a kind of voltage-controlled device. FET can also perform the functions that general transistors (BJT) do, with the only exception that the bias conditions and characteristics are different. Their applications shall thus be chosen in accordance with related advantages and drawbacks.

The characteristics of FET are listed as follows:

• FET has very high input impedance, typically around 100 MΩ.
• When FET is used as switch, there is no offset voltage.
• FET is relatively independent of radiation; whereas BJT is very sensitive to radiation (β value will be varied).
• Intrinsic noise of FET is lower than BJT, which makes FET suitable for the input stage of low-Level amplifier
• During operation the thermal stability of FET is higher than that of BJT.

However, FET also has some drawbacks: comparing with BJT, its product of gain and bandwidth is smaller and it is easier to be damaged by static electricity.

For more details kindly download this link:

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Authored By Krishanu Mitra

Krishanu Mitra is an Associate Author of “Day On My Plate”. Moreover he is a Nature Lover, Traveller and an Academician by profession. 

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